Description

This image was taken using Atomic-force microscopy (AFM). AFM feels or touches the surface with a mechanical probe to provide high-resolution images. The image shows the silicon oxide wafer patterned with aluminum oxide, then coated by our polymer. The island-like areas on each stripe form after forcing the polymer to self-assemble at higher temperatures. The shapes and heights of these islands are different stripes by stripe due to the difference in polarity and chemical affinity of silicon oxide and aluminum oxide. This research addresses the possibility of patterning advanced device architecture, for instance, faster computing chips.